The synthesis of AlTiN typically involves techniques such as physical vapor deposition (PVD) and chemical vapor deposition (CVD). In PVD, a plasma is created from the aluminium and titanium targets, and nitrogen is introduced to form AlTiN on the substrate. CVD involves the chemical reaction of metal-organic precursors with nitrogen gas at high temperatures, leading to the deposition of AlTiN thin films. These methods allow precise control over the film thickness and composition, essential for nanoscale applications.
