The process begins with the preparation of a mask that contains the desired pattern. The mask is typically made of a material like beryllium or silicon carbide, which is transparent to X-rays. The substrate, coated with a photosensitive resist, is then exposed to X-rays through the mask. The X-rays interact with the resist, altering its solubility. After exposure, the substrate undergoes a development process where the altered areas of the resist are removed, leaving behind the desired pattern.
