ReRAM operates on the basic principle of resistive switching. This involves applying a voltage to a dielectric material, which causes a change in its resistance. The material can switch between a high-resistance state (HRS) and a low-resistance state (LRS), representing binary data (0 and 1). The changes in resistance are non-volatile, meaning the data remains stored even when the power is turned off. The mechanisms behind resistive switching often involve the formation and rupture of conductive filaments within the material.
