The process begins with coating a substrate with a thin film of EUV resist. The coated substrate is then exposed to EUV light through a photomask that contains the desired pattern. The EUV light causes chemical changes in the exposed areas of the resist, altering its solubility. The substrate is then developed using a suitable developer solution, which removes either the exposed or unexposed areas depending on whether the resist is positive or negative. This selective removal creates the nanoscale patterns required for further processing steps.
