Electron Beam Lithography (EBL) is a technique that uses a focused beam of electrons to draw custom patterns on a surface coated with an electron-sensitive film, known as a resist. The electron beam changes the solubility of the resist, allowing selective removal of either the exposed or non-exposed regions, thereby creating intricate nanostructures. EBL is widely used due to its high resolution, often below 10 nanometers.
