Several strategies can be employed to mitigate punchthrough in nanoscale devices:
Channel Engineering: Designing the channel region to be longer or using materials with higher dielectric constants can reduce the likelihood of depletion region overlap. Gate Control: Utilizing more advanced gate materials and architectures, such as FinFETs or multi-gate transistors, can provide better control over the channel and reduce the risk of punchthrough. Voltage Optimization: Operating the device at lower drain voltages can minimize the expansion of the depletion regions and prevent overlap. Substrate Engineering: Using substrates with higher resistivity can help in controlling the electric fields within the transistor, thus mitigating punchthrough.
