seda kizir - Nanotechnology

Author Information

Seda Kizir is affiliated with the Industrial Focus Group XUV Optics at the MESA+ Institute of Nanotechnology, University of Twente, located in Enschede, The Netherlands.

Research Contributions

Seda Kizir has made significant contributions to the field of nanotechnology, particularly focusing on the synthesis and properties of thin films and layered materials. Her research spans various topics, including the catalytic growth of graphene, the properties of molybdenum carbide, and the deposition techniques for thin films such as aluminium oxide, GaN, and AlN. Her work has explored the effects of different deposition methods, material interfaces, and post-deposition treatments on the structural and electrical properties of these materials. Notably, her recent studies have investigated the hydrogen etch resistance of aluminium oxide passivated graphitic layers and the bifunctional catalytic effect of Mo2C/oxide interfaces on multi-layer graphene growth.

Aliases

No aliases were provided for Seda Kizir.

Publication and Citation Metrics

Metric	Value
Citation Count	174
h-index	7
Paper Count	20

Publications:

Hydrogen etch resistance of aluminium oxide passivated graphitic layers

DOI: 10.1088/1361-6463/ac2200

Year: 2021

Bifunctional catalytic effect of Mo2C/oxide interface on multi-layer graphene growth

DOI: 10.1038/s41598-021-94694-4

Year: 2021

The role of pinhole structures in Mo thin films on multi-layer graphene synthesis

DOI: 10.1088/2515-7639/ab6fd1

Year: 2020

Increasing the catalytic activity of molybdenum carbide for graphene growth via molybdenum layer properties

DOI:

Year: 2019

One-Pot Synthesis of Hybrid Conjugated Oligomer-Ag Nanoparticles

DOI: 10.1021/acsomega.7b00879

Year: 2017

Postdeposition annealing on RF-sputtered SrTiO3 thin films

DOI: 10.1116/1.4973970

Year: 2017

Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys

DOI: 10.1116/1.4936072

Year: 2016

Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

DOI: 10.1116/1.4937725

Year: 2016

Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

DOI: 10.1088/0268-1242/31/7/075003

Year: 2016

Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

DOI: 10.1116/1.4936230

Year: 2016

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