Ryo Nouchi - Nanotechnology

Author Information

Ryo Nouchi is affiliated with the Department of Physics and Electronics, and the Nanoscience and Nanotechnology Research Center at Osaka Prefecture University in Sakai, Japan. Additionally, he is associated with the PRESTO program at the Japan Science and Technology Agency in Kawaguchi, Japan. His research primarily focuses on nanotechnology, with a particular interest in field-effect transistors, two-dimensional materials, and organic devices.

Research Contributions

Ryo Nouchi has made significant contributions to the field of nanotechnology, particularly in the development and application of field-effect transistors and two-dimensional materials. His recent work includes studies on chemical reactions on two-dimensional materials controlled by field-effect transistor configurations, the assembly of vanadium pentoxide nanowires on graphene, and the investigation of staircase-like transfer characteristics in multilayer MoS2 field-effect transistors. Nouchi has also explored the mechanisms of water-induced instabilities in organic devices, the formation of conducting filaments in nanosheet-derived titania thin films, and the growth of vanadium dioxide thin films on hexagonal boron nitride flakes. His research has been pivotal in advancing our understanding of the electronic structure modification of graphene and the thermal metal-insulator transition in VO2 integrated into field-effect transistors.

Aliases

Ryo Nouchi is also known by other aliases including R Nouchi and R. Nouchi.

Publication and Citation Metrics

Metric	Value
Citation Count	1075
h-index	18
Paper Count	88

Publications:

Field-effect surface chemistry: chemical reactions on two-dimensional materials controlled by field-effect transistor configurations

DOI: 10.1088/2632-959X/ac603f

Year: 2022

Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique

DOI: 10.1088/1361-6528/ac3615

Year: 2021

Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors

DOI: 10.1088/2632-959X/ab70e6

Year: 2020

Dipolar Switching of Charge‐Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water‐Induced Instabilities of Organic Devices

DOI: 10.1002/admi.202000654

Year: 2020

Tolerance against conducting filament formation in nanosheet-derived titania thin films

DOI: 10.1088/2632-959X/ab9024

Year: 2020

Title Cryogenic InSb detector for radiation measurements

DOI:

Year: 2020

Water permeation pathways in laminated organic single-crystal devices

DOI: 10.1063/5.0009912

Year: 2020

Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

DOI: 10.1038/s41598-019-39091-8

Year: 2019

Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor.

DOI: 10.1021/acsami.8b18745

Year: 2019

Gate-controlled photo-oxidation of graphene for electronic structure modification

DOI: 10.1039/C8TC05639K

Year: 2019

What are Tumors?

Are There Any Challenges Associated with Size Dependency?

What is Stimulated Emission?

How Do We Ensure Safety in Nanotechnology Research and Applications?

What are the Challenges in Implementing Nanotechnology for Durability?

How is Fluid Control Achieved at the Nanoscale?

Who Provides Nanotechnology Research Grants?

How Does Nano Bioengineering Work?

How Does Quantum Mechanics Relate to Atomic Structure in Nanotechnology?

How Does Quantum Chemistry Contribute to the Field of Catalysis?

Partnered Content Networks

Relevant Topics