Andrej Y. Kuznetsov - Nanotechnology

Author Information

Andrej Y. Kuznetsov is affiliated with the Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Blindern, PO Box 1048, 0316, Oslo, Norway. His research primarily focuses on nanotechnology and material science, with significant contributions in the study of defects in semiconductors and their effects on material properties.

Research Contributions

Andrej Y. Kuznetsov has made notable contributions to the field of nanotechnology, particularly in understanding defect dynamics in semiconductor materials. His work spans from investigating disorder-induced ordering in gallium oxide polymorphs to studying the photoluminescence intensity modulation in Cu-doped ZnO via defect occupancy. His research also includes exploring radiation-induced defect accumulation and annealing in Si-implanted gallium oxide and understanding the role of metal impurities in multicrystalline silicon solar cell degradation. His earlier works delve into the physics of quantum emitters and resonant acceptor states in germanium-based materials.

Aliases

Andrej Y. Kuznetsov is also known by several aliases in academic publications, including A Kuznetsov, A. Kuznetsov, Andrej Kuznetsov, and A.yul Kuznetsov.

Publication and Citation Metrics

Metric	Value
H-index	7
Total Citations	126
Paper Count	28

Publications:

Disorder-Induced Ordering in Gallium Oxide Polymorphs

DOI: 10.1103/PhysRevLett.128.015704

Year: 2022

Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias

DOI: 10.1088/1361-6463/ac6912

Year: 2022

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

DOI: 10.1063/5.0083858

Year: 2022

Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification

DOI: 10.1063/5.0070045

Year: 2021

Role of metal impurities in multicrystalline silicon solar cell degradation

DOI: 10.35848/1882-0786/ac2ae6

Year: 2021

The Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM-EELS Nanoscale Investigations.

DOI: 10.1021/acs.jpclett.9b01472

Year: 2019

Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states

DOI: 10.1103/PHYSREVB.91.205316

Year: 2014

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

DOI: 10.1088/1674-1056/20/6/066104

Year: 2011

Defense Technical Information Center Compilation Part Notice ADP 013124 TITLE : Resonant Acceptors States in Ge / Ge

DOI:

Year: -9223372036854775808

Resonant acceptors states in Ge / Gej _ . Sij MQW heterostructures

DOI:

Year: -9223372036854775808

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