Improved electrostatic control: The gate's full encapsulation of the channel ensures better control, reducing off-state leakage.
Enhanced performance: The improved gate control allows for higher drive currents and faster switching speeds.
Scalability: GAA structures are more scalable, making them suitable for
advanced technology nodes below 5nm.
Reduced power consumption: The superior control over the channel reduces power leakage, leading to lower power consumption.
Complex fabrication: The multi-layer structure of GAA transistors complicates the
fabrication process, requiring advanced lithography and etching techniques.
Material limitations: The materials used in GAA structures must be carefully chosen to balance performance and reliability.
Thermal management: Enhanced performance often leads to increased heat generation, necessitating efficient thermal management solutions.
High-performance computing: The improved speed and efficiency of GAA transistors make them suitable for
supercomputers and data centers.
Mobile devices: Reduced power consumption and enhanced performance are critical for
smartphones and
tablets.
Internet of Things (IoT): Scalability and low power consumption make GAA ideal for
IoT devices that require long battery life.