In n-type doping, elements from Group V of the periodic table, such as phosphorus, arsenic, or antimony, are introduced into the semiconductor material, usually silicon. These dopant atoms have five valence electrons, one more than silicon. The extra electron becomes a free carrier, increasing the electrical conductivity of the material. In nanotechnology, precise control over the doping process is critical for tailoring the properties of nanomaterials for specific applications.
