Lasse Vines - Nanotechnology

Author Information

Lasse Vines is affiliated with the Department of Physics at the Centre for Materials Science and Nanotechnology, University of Oslo, located in Oslo, Norway. His research primarily focuses on materials science and nanotechnology.

Research Contributions

Lasse Vines has made significant contributions to the field of nanotechnology and materials science. His research encompasses various aspects of solid-state materials, quantum technologies, and defect levels in semiconductors. In 2022, he published several papers, including studies on predicting solid-state material platforms for quantum technologies, the formation of carbon interstitial-related defect levels in 4H-SiC, and the influence of heat treatments on defect centers in beta-Ga2O3. His work also covers topics such as gettering in PolySi/SiOx passivating contacts for Si-based tandem solar cells and radiation-induced defect accumulation in Si-implanted gallium oxide. In 2021, his research included exploring the interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type beta-Ga2O3, the influence of electronic shell structure on ion channeling in 4H-SiC, and the dielectric constant of titanium dioxide.

Aliases

Lasse Vines is also known by the aliases L Vines and L. Vines.

Publication and Citation Metrics

Metric	Value
Citation Count	2156
h-index	20
Paper Count	210

Publications:

Predicting Solid State Material Platforms for Quantum Technologies

DOI:

Year: 2022

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

DOI: 10.1063/5.0077308

Year: 2022

Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3

DOI: 10.1063/5.0083861

Year: 2022

Gettering in PolySi/SiOx Passivating Contacts Enables Si-Based Tandem Solar Cells with High Thermal and Contamination Resilience.

DOI: 10.1021/acsami.2c00319

Year: 2022

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

DOI: 10.1063/5.0083858

Year: 2022

Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

DOI: 10.1063/5.0042518

Year: 2021

Influence from the electronic shell structure on the range distribution during channeling of 40–300 keV ions in 4H-SiC

DOI: 10.1063/5.0054188

Year: 2021

Phosphorus implantation into 4H-SiC at room and elevated temperature

DOI: 10.1088/1361-6641/abf55a

Year: 2021

On the dielectric constant of titanium dioxide

DOI: 10.21203/RS.3.RS-301495/V1

Year: 2021

Dominant hydrogen complex in natural anatase TiO2

DOI: 10.1063/5.0067495

Year: 2021

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What are the Applications of Nanotechnology in Energy Conversion?

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How Do Nanomaterials Enhance Electronics?

What are the Challenges Associated with Material Variability?

How Can Regulations Be Implemented Effectively?

What is Electromagnetics in Nanotechnology?

How Can You Secure a Patent in Nanotechnology?

What Are Nanomaterials Used in Message Carriers?

What are the Different Types of Nanoscale Spectroscopy?

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