Jonas Jurkevičius - Nanotechnology

Author Information

Jonas Jurkevičius is affiliated with the Institute of Photonics and Nanotechnology at Vilnius University, located at Saulėtekio ave. 3, Vilnius, LT-10257, Lithuania. His research contributions predominantly span the field of nanotechnology with a focus on photonics and materials science.

Research Contributions

Jonas Jurkevičius has made significant contributions to the field of nanotechnology, particularly in the study of epitaxial layers and carrier dynamics. His work includes the development of methods for remote detection of ionizing radiation using transient optical absorption and the investigation of carrier mobility and radiation resistance in materials like InN and AlGaN. His research has practical implications in improving material efficiencies for various photonic applications.

Aliases

The author is also known by several aliases including J Jurkevičius, J. Jurkevičius, Jonas Jurkevicius, and Jonas Jurkevičius.

Publication and Citation Metrics

Publication Year	Title	DOI
2022	A new method for remote detection of ionizing radiation using transient optical absorption	10.1016/j.nima.2022.166408
2019	The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface	10.1038/s41598-019-53732-y
2019	Influence of proton irradiation on carrier mobility in InN epitaxial layers	10.1016/j.tsf.2019.137619
2019	Extreme radiation resistance in InN	10.1016/J.JALLCOM.2019.03.108
2016	Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers	10.1016/J.CAP.2016.03.010
2016	Photoluminescence efficiency of BGaN epitaxial layers with high boron content	10.1016/J.PHYSB.2016.03.033
2016	Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers	10.1088/0022-3727/49/14/145110
2016	Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells	10.1063/1.4947574
2015	Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD	10.1002/pssb.201451560
2015	Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content	10.1007/s11664-015-4132-7