Idriss Abid - Nanotechnology

Author Information

Idriss Abid is currently affiliated with the Institute of Electronics, Microelectronics and Nanotechnology (IEMN), located at Avenue Poincaré, 59650 Villeneuve d'Ascq, France. His research is primarily focused on the development and improvement of GaN-based devices, particularly high electron mobility transistors (HEMTs) and their associated technologies.

Research Contributions

Idriss Abid has made significant contributions to the field of nanotechnology and electronics, with a particular focus on GaN-based power devices. His work includes the analysis and development of high electron mobility transistors (HEMTs) with various structures and materials to improve their performance and reliability. Key areas of his research include investigating vertical leakage in GaN-on-Si stacks, achieving high breakdown voltages, and reducing current collapse in GaN-based transistors.

Aliases

Idriss Abid is also known by the alias "I. Abid".

Publication and Citation Metrics

Year	Title	DOI
2021	AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts	10.3390/ELECTRONICS10060635
2021	GaN-based power devices: Physics, reliability, and perspectives	10.1063/5.0061354
2021	GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal	10.35848/1882-0786/abdca0
2020	Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment	10.3390/mi11010101
2020	High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications	10.3390/ma13194271
2020	Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure	10.1109/ISPSD46842.2020.9170170
2019	AlGaN/GaN High Electron Mobility Transistors with Ultra-Wide Bandgap AlN buffer	N/A
2019	High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates	10.3390/mi10100690
2019	Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment	10.1016/j.microrel.2019.113461
2019	Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V	N/A