Author Information
Farid Medjdoub is an esteemed researcher associated with the Institute of Electronics, Microelectronics, and Nanotechnology (IEMN), located at Avenue Poincaré, 59650 Villeneuve d'Ascq, France. His research primarily focuses on the field of nanotechnology, with a keen interest in GaN-based devices and high electron mobility transistors (HEMTs).Research Contributions
Farid Medjdoub has made significant contributions to the field of nanotechnology, particularly in the development and optimization of GaN-based devices. His work spans various aspects of device physics, reliability, and performance improvement. Some notable research topics include the transport properties of GaN channels, optimized buffer stacks for GaN HEMTs, and the investigation of vertical leakage in GaN-on-Si stacks. His studies often aim at enhancing the robustness, reliability, and efficiency of electronic devices, making them more suitable for high voltage and high-frequency applications.Aliases
The author is also known by other names including "F Medjdoub" and "F. Medjdoub". However, the most appropriate and full name to use is Farid Medjdoub.Publication and Citation Metrics
| Metric |
Value |
| Total Citation Count |
2127 |
| h-index |
25 |
| Total Paper Count |
153 |
