Tunneling Field Effect Transistors (tfets) - Nanotechnology

Relevant Publications

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.

Issue Release: 2024

Single-Gate MoS Tunnel FET with a Thickness-Modulated Homojunction.

Issue Release: 2024

Two-Dimensional GeS/SnSe Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity.

Issue Release: 2024

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance.

Issue Release: 2023

Sensing single domains and individual defects in scaled ferroelectrics.

Issue Release: 2023

A novel broken-gap chemical-bonded SiC/TiCO heterojunction with band to band tunneling: first-principles investigation.

Issue Release: 2023

Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing.

Issue Release: 2022

Improving performance of monolayer arsenene tunnel field-effect transistors by defects.

Issue Release: 2022

Effect of high-pressure D and H annealing on LFN properties in FD-SOI pTFET.

Issue Release: 2022

Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes.

Issue Release: 2022

Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification.

Issue Release: 2021

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors.

Issue Release: 2021

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors.

Issue Release: 2021

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects.

Issue Release: 2020

All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality.

Issue Release: 2020

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities.

Issue Release: 2020

Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors.

Issue Release: 2020

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors.

Issue Release: 2020

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe Heterostructure.

Issue Release: 2019

Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors.

Issue Release: 2019

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