High-k dielectrics: Using materials with high dielectric constants to reduce leakage currents and improve control over Vth.
Strain engineering: Applying mechanical strain to the semiconductor to alter its electronic properties and adjust the threshold voltage.
Doping engineering: Precisely controlling the doping levels in the semiconductor to achieve the desired Vth.
Gate work function tuning: Selecting gate materials with specific work functions to achieve the desired threshold voltage.
Conclusion
Threshold voltage is a critical parameter in the design and operation of nanoscale devices. Understanding the factors that influence Vth and developing techniques to control it are essential for advancing nanotechnology. As research progresses, new materials and methods will continue to enhance our ability to precisely control threshold voltage, leading to more efficient and reliable nanoelectronic devices.